Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well
نویسندگان
چکیده
We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ;500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se–ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ;1310 cm and we deduce an ambipolar diffusion constant of 1.7 cm s. © 1997 American Institute of Physics. @S0021-8979~97!04201-1#
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